IRF5801PBF-1

200V Single N-Channel IR MOSFET in a TSOP-6 (Micro 6) package
Data Sheet

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IRF5801PBF-1
IRF5801PBF-1
Data Sheet

Product details

  • ID (@25°C) max
    0.6 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    TSOP-6
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd
    2.2 nC
  • QG (typ @10V)
    3.9 nC
  • RDS (on) (@10V) max
    2200 mΩ
  • RthJA max
    62.5 K/W
  • Special Features
    Small Power
  • Tj max
    150 °C
  • VDS max
    200 V
  • VGS(th)
    4.25 V
  • VGS max
    30 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100KHz
  • Industry standard surface-mount package

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop-in replacement

Documents

Documents

Design resources

Partner solutions

Developer community

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