IRF520N
not for new design
RoHS Compliant

IRF520N

100V Single N-Channel Power MOSFET in a TO-220 package

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Product details

  • Budgetary Price €/1k
    0.25
  • ID (@25°C) max
    9.7 A
  • Mounting
    THT
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    48 W
  • Qgd
    7.3 nC
  • QG (typ @10V)
    16.7 nC
  • RDS (on) (@10V) max
    200 mΩ
  • RthJC max
    3.1 K/W
  • Tj max
    175 °C
  • VDS max
    100 V
  • VGS(th) range
    2 V to 4 V
  • VGS(th)
    3 V
  • VGS max
    20 V

OPN
IRF520NPBF
Product Status not for new design
Infineon Package
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
CN,TW,US

Product Status not for new design
Infineon Package
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
CN,TW,US

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification
  • High performance, low-frequency
  • Drop-in replacement to existing devices
  • High current capability
Documents

Design resources

Developer community