Active
RoHS Compliant

IRF1010E

60V Single N-Channel Power MOSFET in a TO-220 package
Data Sheet
package
ea.
in stock

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IRF1010E
IRF1010E
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.44
  • ID (@25°C) max
    84 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    170 W
  • Qgd
    29.3 nC
  • QG (typ @10V)
    86.6 nC
  • RDS (on) (@10V) max
    12 mΩ
  • RthJC max
    0.9 K/W
  • Tj max
    175 °C
  • VDS max
    60 V
  • VGS(th)
    3 V
  • VGS max
    20 V
Recommended
OPN
IRF1010EPBF
Product Status active
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Industry standard surface-mount power package
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • Standard pinout allows for drop in replacement
  • High current carrying capability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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