Active and preferred
RoHS Compliant

IQE220N15NM5SC

OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package
Data Sheet
package
ea.
in stock

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IQE220N15NM5SC
IQE220N15NM5SC
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    1.02
  • ID (@25°C) max
    44 A
  • IDpuls max
    176 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    14.4 nC
  • RDS (on) (@10V) max
    22 mΩ
  • VDS max
    150 V
  • VGS(th)
    3.8 V
Recommended
OPN
IQE220N15NM5SCATMA1
Product Status active and preferred
Infineon Package
PG-WHSON-8
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WHSON-8
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).

Features

  • RDS(on) of 22 mOhm
  • Better RthJC compared to PQFN packages
  • Standard-gate footprints available
  • New, optimized layout possibilities

Benefits

  • Highest power density and performance
  • Superior thermal performance
  • Efficient use of real-estate
  • Standard-Gate for easy layout fit-in
  • Improved PCB losses
  • Reduced parasitics

Applications

Documents

Documents

Design resources

Partner solutions

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