Active and preferred
RoHS Compliant

IQE220N15NM5

OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
Data Sheet
package
ea.
in stock

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IQE220N15NM5
IQE220N15NM5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.92
  • ID (@25°C) max
    44 A
  • IDpuls max
    176 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • Ptot max
    100 W
  • QG (typ @10V)
    14.4 nC
  • RDS (on) (@10V) max
    22 mΩ
  • VDS max
    150 V
  • VGS(th)
    3.8 V
Recommended
OPN
IQE220N15NM5ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).

Features

  • RDS(on) of 22 mOhm
  • Better RthJC compared to PQFN packages
  • Standard-gate footprints available
  • New, optimized layout possibilities

Benefits

  • Highest power density and performance
  • Superior thermal performance
  • Efficient use of real-estate
  • Standard-Gate for easy layout fit-in
  • Improved PCB losses
  • Reduced parasitics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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