Active and preferred
RoHS Compliant

IQDH35N03LM5SC

OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
Data Sheet
package
ea.
in stock

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IQDH35N03LM5SC
IQDH35N03LM5SC
ea.
Data Sheet

Product details

  • ID (@25°C) max
    700 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    PQFN 5x6 Source-Down
  • Polarity
    N
  • QG (typ @4.5V)
    91 nC
  • QG (typ @10V)
    197 nC
  • RDS (on) (@10V) max
    0.35 mΩ
  • RDS (on) (@4.5V) max
    0.4 mΩ
  • VDS max
    30 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQDH35N03LM5SCATMA1
Product Status active and preferred
Infineon Package
PG-WHSON-8
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WHSON-8
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The power MOSFET IQDH35N03LM5SC comes with a  low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.

Features

  • Cutting edge 30 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio

Benefits

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

Documents

Documents

Design resources

Partner solutions

Developer community

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