Active and preferred
RoHS Compliant

IQD016N08NM5CG

OptiMOS™ power MOSFETs 80 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on)
ea.
in stock

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IQD016N08NM5CG
IQD016N08NM5CG
ea.

Product details

  • Budgetary Price €/1k
    1.88
  • ID (@25°C) max
    323 A
  • IDpuls max
    1292 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 5x6 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    106 nC
  • RDS (on) (@10V) max
    1.57 mΩ
  • Special Features
    Center-Gate
  • VDS max
    80 V
  • VGS(th)
    3 V
OPN
IQD016N08NM5CGATMA1
Product Status active and preferred
Infineon Package PG-TTFN-9
Package Name PQFN 5x6 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package PG-TTFN-9
Package Name PQFN 5x6 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

Features

  • OptiMOS™ 80 V with outstanding FOMs
  • Source-Down package with thermal
  • Source-Down with maximized chip ratio
  • Source-Down in Center-Gate footprint

Benefits

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate for optimal parallelization
  • Lowest RDS(on) on 5x6 mm² PCB
  • Enhanced thermal management
  • Minimal parasitics, optimal switching
  • Industry standard package

Applications

Documents

Design resources

Developer community

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