Active and preferred
RoHS Compliant

IQD005N04NM6

OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down package with very low RDS(on).
Data Sheet
package
ea.
in stock

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IQD005N04NM6
IQD005N04NM6
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    1.43
  • ID (@25°C) max
    610 A
  • IDpuls max
    2440 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 5x6 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    130 nC
  • RDS (on) (@10V) max
    0.47 mΩ
  • VDS max
    40 V
  • VGS(th)
    2.3 V
Recommended
OPN
IQD005N04NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 5x6 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 5x6 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The power MOSFET IQD005N04NM6 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,5 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.

Features

  • Cutting edge 40 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

Benefits

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

 

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