Active
RoHS Compliant
Lead-free

IPT65R040CFD7

The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Data Sheet
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IPT65R040CFD7
IPT65R040CFD7
Data Sheet

Product details

  • Budgetary Price €/1k
    3.77
  • IDpuls max
    211 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TOLL
  • Polarity
    N
  • QG
    97 nC
  • RDS (on) max
    40 mΩ
  • VDS max
    650 V
  • VGS(th)
    4 V
Recommended
OPN
IPT65R040CFD7XTMA1
Product Status active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R040CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition.  As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies
  • Enables high power density
  • Enables better control
  • Kelvin source

Documents

Documents

Design resources

Partner solutions

Developer community

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