Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

IPS60R600PFD7S

END OF LIFE
600V CoolMOS™ PFD7 superjunction MOSFET in TO-251 IPAK short-lead package
Data Sheet
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IPS60R600PFD7S
IPS60R600PFD7S
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Data Sheet

Product details

  • ID (@25°C) max
    6 A
  • ID max
    6 A
  • IDpuls max
    14 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    IPAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    31 W
  • QG
    8.5 nC
  • QG (typ @10V)
    8.5 nC
  • RDS (on) (@10V) max
    600 mΩ
  • RDS (on) max
    600 mΩ
  • Special Features
    price/performance
  • VDS max
    600 V
  • VGS(th)
    4 V
OPN
IPS60R600PFD7SAKMA1
Product Status discontinued
Infineon Package PG-TO251-3
Package Name IPAK
Packing Size 1500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package PG-TO251-3
Package Name IPAK
Packing Size 1500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPS60R600PFD7S in a TO-251 IPAK SL package features RDS(on) of 600mOhm resulting in low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE technologies resulting in  an increase in power density by 1.8W/inch3.

Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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