IPP120N04S3-02

40 V, N-Ch, 2.3 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T
Data Sheet

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IPP120N04S3-02
IPP120N04S3-02
Data Sheet

Product details

  • Budgetary Price €/1k
    2.4
  • ID (@25°C) max
    120 A
  • IDpuls max
    480 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO220 (PG-TO220-3)
  • Polarity
    N
  • Ptot max
    300 W
  • QG (typ @10V) max
    210 nC
  • QG (typ @10V)
    160 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    2 mΩ
  • RthJC max
    0.5 K/W
  • Technology
    OptiMOS™-T
  • VDS max
    40 V
  • VGS(th)
    3 V
  • VGS(th) min
    2.1 V
  • VGS(th) max
    4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Highest current capability
  • Low switching & conduction power losses
  • High thermal efficiency
  • Robust packages & superior quality
  • Optimized Qg tot, smaller drivers output

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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