IPL65R460CFD

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IPL65R460CFD
IPL65R460CFD

Product details

  • ID (@25°C) max
    8.3 A
  • ID max
    8.3 A
  • IDpuls max
    25 A
  • Mounting
    SMT
  • Operating Temperature min
    -40 °C
  • Package
    ThinPAK 8x8
  • Pin Count
    5 Pins
  • Polarity
    N
  • Ptot max
    83.3 W
  • QG
    31.5 nC
  • QG (typ @10V)
    31.5 nC
  • RDS (on) max
    460 mΩ
  • RDS (on) (@10V) max
    460 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.5 K/W
  • Rth
    1.5 K/W
  • VDS max
    650 V
  • VGS(th)
    3.5 V to 4.5 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

Benefits

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

Applications

Documents

Design resources

Developer community

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