Active
RoHS Compliant
Lead-free

IPDQ60R065S7

Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions
Data Sheet
package

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IPDQ60R065S7
IPDQ60R065S7
Data Sheet

Product details

  • Budgetary Price €/1k
    2.33
  • IDpuls max
    126 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK
  • Polarity
    N
  • QG
    51 nC
  • QG (typ @10V)
    51 nC
  • RDS (on) (@ Tj = 25°C)
    59 mΩ
  • Special Features
    Slow switching
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPDQ60R065S7XTMA1
Product Status active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isolated gate drivers, and PVI (photovoltaic isolators).

Features

  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source for high current switching

Benefits

  • Minimal conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks
  • Lower TCO or BOM Cost

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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