Active
RoHS Compliant
Lead-free

IPDQ60R022S7

Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions
Data Sheet
package
ea.
in stock

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IPDQ60R022S7
IPDQ60R022S7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    5.35
  • IDpuls max
    375 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK
  • Polarity
    N
  • QG
    150 nC
  • QG (typ @10V)
    150 nC
  • RDS (on) (@ Tj = 25°C)
    20 mΩ
  • Special Features
    Slow switching
  • VDS max
    600 V
  • VGS(th)
    4 V
Recommended
OPN
IPDQ60R022S7XTMA1
Product Status active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isolated gate drivers, and PVI (photovoltaic isolators).

Features

  • Low RDS(on)
  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability

Benefits

  • Minimal conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks
  • Lower TCO or BOM Cost

Documents

Documents

Design resources

Partner solutions

Developer community

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