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IPB65R110CFDA

650V, N-Ch, 110 mΩ max, Automotive MOSFET, D2PAK, CoolMOS™ CFDA
Data Sheet
package
ea.
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IPB65R110CFDA
IPB65R110CFDA
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    2.43
  • ID (@25°C) max
    31.2 A
  • IDpuls max
    99.6 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK
  • Polarity
    N
  • Ptot max
    277.8 W
  • QG (typ @10V) max
    118 nC
  • QG
    118 nC
  • Qualification
    Automotive
  • RDS (on) max
    110 mΩ
  • RDS (on) (@10V) max
    110 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.45 K/W
  • Rth
    0.45 K/W
  • Special Features
    automotive
  • Technology
    CoolMOS™ CFDA
  • Topology
    Full Bridge
  • VDS max
    650 V
  • VGS(th) max
    4.5 V
  • VGS(th) min
    3.5 V
Recommended
OPN
IPB65R110CFDAATMA1
Product Status active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

Features

  • CoolMOS™ 3 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • automotive qualification
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Documents

Design resources

Partner solutions

Developer community

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