Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

IPB60R090CFD7

END OF LIFE
600V CoolMOS™ CFD7 SJ MOSFET with integrated fast body diode in D2PAK package is the perfect choice for resonant high power topologies
Data Sheet
package
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IPB60R090CFD7
IPB60R090CFD7
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Data Sheet

Product details

  • ID max
    25 A
  • ID (@25°C) max
    25 A
  • IDpuls max
    97 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D2PAK
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    124 W
  • QG (typ @10V)
    51 nC
  • QG
    51 nC
  • RDS (on) max
    90 mΩ
  • RDS (on) (@10V) max
    90 mΩ
  • Special Features
    fast recovery diode
  • VDS max
    600 V
  • VGS(th)
    4 V
OPN
IPB60R090CFD7ATMA1
Product Status discontinued
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS , such as server , telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.

Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and EOSS
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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