IPB45N06S4L-08
not for new design
RoHS Compliant

IPB45N06S4L-08

60 V, N-Ch, 7.9 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2

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IPB45N06S4L-08
IPB45N06S4L-08


Product details

  • Budgetary Price €/1k
    0.51
  • Country of Assembly (Last BE site, current, subject to change)
    Mexico, Malaysia
  • Country of Diffusion (Last FE site, current, subject to change)
    Malaysia
  • ID (@25°C) max
    45 A
  • IDpuls max
    180 A
  • Launch year
    2009
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    D2PAK (PG-TO263-3)
  • Planned to be available until at least
    2027
  • Polarity
    N
  • Ptot max
    71 W
  • QG (typ @10V) max
    64 nC
  • QG (typ @10V)
    49 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    7.9 mΩ
  • RthJC max
    2.1 K/W
  • Technology
    OptiMOS™T2
  • VDS max
    60 V
  • VGS(th) range
    1.2 V to 2.2 V
  • VGS(th)
    1.7 V

OPN
IPB45N06S4L08ATMA3
Product Status not for new design
Infineon Package
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
MY

Product Status not for new design
Infineon Package
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
MY

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Highest current capability
  • Lowest switching and conduction losses
  • High thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller drivers output stages
Documents

Design resources

Developer community