Active and preferred
RoHS Compliant

IPB175N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package
Data Sheet
package
ea.
in stock

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IPB175N20NM6
IPB175N20NM6
ea.
Data Sheet

Product details

  • ID (@25°C) max
    61 A
  • IDpuls max
    244 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • QG (typ @10V)
    31 nC
  • QG
    31 nC
  • RDS (on) (@10V) max
    17.5 mΩ
  • RDS (on) max
    17.5 mΩ
  • VDS max
    200 V
  • VGS(th)
    3.7 V
Recommended
OPN
IPB175N20NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IPB175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFET™ products.

Features

  1. Industries lowest RDS(on) in 200 V
  2. Industries lowest Qrr in 200 V
  3. Up to 42 % lower RDS(on) vs previous gen
  4. Up to 89% lower Qrr(typ) vs previous gen
  5. 36% lower FOMg vs previous gen
  6. >3 times softer diode vs previous gen
  7. Improved capacitance linearity
  8. Improved SOA vs previous gen
  9. Tight Vgs(th) spread of +/-750 mV
  10. High avalanche ruggedness
  11. Max Tj of 175°C and MSL1

Benefits

  1. Low Conduction and Switching Losses
  2. Stable operation with improved EMI
  3. Better current sharing when paralleling
  4. Enhanced robustness
  5. Improved system reliability

Documents

Documents

Design resources

Partner solutions

Developer community

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