IPB100N08S2-07

75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™

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IPB100N08S2-07
IPB100N08S2-07

Product details

  • Budgetary Price €/1k
    1.71
  • ID (@25°C) max
    100 A
  • IDpuls max
    400 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (PG-TO263-3)
  • Polarity
    N
  • Ptot max
    300 W
  • QG (typ @10V) max
    144 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    6.8 mΩ
  • RthJC max
    0.5 K/W
  • Technology
    OptiMOS™
  • VDS max
    75 V
  • VGS(th) min
    2.1 V
  • VGS(th) max
    4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • N-channel
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested

Benefits

  • world's lowest RDS at 75V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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