not for new design
RoHS Compliant

IPB024N08N5

Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
Data Sheet
package

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IPB024N08N5
IPB024N08N5
Data Sheet

Product details

  • Budgetary Price €/1k
    1.42
  • Ciss
    6900 pF
  • Coss
    1100 pF
  • ID (@25°C) max
    166 A
  • IDpuls max
    480 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    214 W
  • QG (typ @10V)
    99 nC
  • RDS (on) (@10V) max
    2.4 mΩ
  • RthJA max
    62 K/W
  • Rth
    0.7 K/W
  • VDS max
    80 V
  • VGS(th)
    3 V
OPN
IPB024N08N5ATMA1
Product Status not for new design
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB024N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar , low voltage drives and adapters .

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction up to 44 %
  • 43% lower Rds(on) vs. previous gen

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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