NEW
Active and preferred
RoHS Compliant
Lead-free

IMZA65R075M2H

NEW
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ
ea.
in stock

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IMZA65R075M2H
IMZA65R075M2H
ea.

Product details

  • ID (@25°C) max
    26.6 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO247 4-pin (asymmetric leads)
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    75 mΩ
  • RthJC max
    1.35 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
OPN
IMZA65R075M2HXKSA1
Product Status active and preferred
Infineon Package
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247 4-pin (asymmetric leads)
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • Outstanding robustness
  • Flexible driving voltage range
  • Improved package interconnect with .XT
  • Tj,max=175°C
  • Kelvin pin

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design
  • Fully leverages SiC in a small footprint

Documents

Design resources

Developer community

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