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IMW120R350M1H

CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package
Data Sheet
package
ea.
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IMW120R350M1H
IMW120R350M1H
ea.
Data Sheet

Product details

  • Ciss
    182 pF
  • Coss
    10 pF
  • ID (@25°C) max
    4.7 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-247-3
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot (@25°C) max
    60 W
  • Qgd
    1.2 nC
  • QG (typ @18V)
    5.3 nC
  • Qualification
    Industrial
  • RDS (on) (@18V)
    350 mΩ
  • RDS (on) (@ Tj = 25°C)
    350 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    2.5 K/W
  • Technology
    CoolSiC™ G1
  • Tj max
    175 °C
  • VDS max
    1200 V
Recommended
OPN
IMW120R350M1HXKSA1
Product Status active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSiC™ MOSFET discrete 1200 V, 350 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark high threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage for easy
  • Simple gate drive
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Rated for hard commutation
  • Temp. ind. turnoff switching losses

Documents

Documents

Design resources

Partner solutions

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