not for new design
RoHS Compliant
Lead-free

IMT65R107M1H

CoolSiC™ MOSFET discrete 650 V in TOLL package
Data Sheet
package
ea.
in stock

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IMT65R107M1H
IMT65R107M1H
ea.
Data Sheet

Product details

  • ID (@25°C) max
    47 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLL
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    107 mΩ
  • Technology
    CoolSiC™ G1
  • VDS max
    650 V
OPN
IMT65R107M1HXUMA1
Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSIC™ MOSFET 650 V, 107 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 107 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The 107 mΩ product is suitable for mid power systems, optimizing the performance per $. It ideally fits the emerging Totem Pole PFC topology in mid power systems, also enabling high efficiency and density in DC-DC and AC-DC stages. It is also successfully used in interleaved topologies to address high efficiency targets in high to mid power systems.

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Benefits

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }