IMT65R039M1H
not for new design
RoHS Compliant
Lead-free

IMT65R039M1H

CoolSiC™ MOSFET discrete 650 V in TOLL package
Datasheet
package
board
View replacement

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IMT65R039M1H
IMT65R039M1H
View replacement
Datasheet


Product details

  • ID (@25°C) max
    122 A
  • Mounting
    SMT
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    TOLL
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C) max
    51 mΩ
  • RDS (on) (@ Tj = 25°C)
    39 mΩ
  • Technology
    CoolSiC™ G1
  • VDS max
    650 V

OPN
IMT65R039M1HXUMA1
Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
View replacement

Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
View replacement
CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The reduction of thermal impedance compare to D²PAK, together with the innovative .XT interconnect, make the 39 mΩ product suitable for high power designs as well as mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems.

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Benefits

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

Applications

Documents

Design resources

Partner solutions

Developer community