Active and preferred
RoHS Compliant
Lead-free

IGI60L1414B1M

140 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IGI60L1414B1M
IGI60L1414B1M
Data Sheet

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@25°C) max
    6 A
  • IDpuls (@25°C) max
    23 A
  • QG
    1.8 nC
  • RDS (on) (typ)
    140 mΩ
  • VDS max
    600 V
Recommended
OPN
IGI60L1414B1MXUMA1
Product Status active and preferred
Infineon Package PG-TFLGA-27
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package PG-TFLGA-27
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Features

  • Integrated level shift gate driver
  • Integrated bootstrap diode
  • PWM input compatible
  • Wide VDD range (10 to 24 V)
  • Turn-ON & OFF dv/dt slew rate control
  • Zero Qrr

Benefits

  • 4x reduction in components count
  • 2x reduction of footprint on a PCB

  • Reduced cost
  • Reduced weight
  • Reduced complexity

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }