Active
RoHS Compliant
Lead-free

IGC50T120T8RQ

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IGC50T120T8RQ
IGC50T120T8RQ

Product details

  • IC max
    50 A
  • Operating Temperature
    -40 °C to 175 °C
  • Technology
    IGBT HighSpeed 3
  • VCE(sat) max
    2.42 V
  • VCE max
    1200 V
  • VDS max
    1200 V
  • VGE(th)
    5.3 V to 6.3 V
OPN
IGC50T120T8RQX1SA1
Product Status active
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type WAFER SAWN
Moisture Level N/A
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type WAFER SAWN
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

Features

  • Positive temperature coefficient
  • Easy paralleling

Applications

Documents

Design resources

Developer community

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