Active and preferred
RoHS Compliant

IGB50N65S5

650 V, 50 A IGBT with anti-parallel diode in TO-263 package
Data Sheet
package
ea.
in stock

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IGB50N65S5
IGB50N65S5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.23 mJ
  • Eon
    1.23 mJ
  • IC (@ 25°) max
    80 A
  • IC (@ 100°) max
    63 A
  • ICpuls max
    200 A
  • Package
    PG-TO263-3
  • Ptot max
    270 W
  • QGate
    120 nC
  • RGint
    0 Ω
  • RG
    8.2 Ω
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    139 ns
  • td(on)
    20 ns
  • Technology
    IGBT TRENCHSTOP™ 5
  • tf
    60 ns
  • tr
    30 ns
  • VCE(sat)
    1.35 V
  • VCE max
    650 V
Recommended
OPN
IGB50N65S5ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT , addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Features

  • Very low VCE(sat)of 1.35 V at 25°C
  • IC(n)= 4x nominal curr. @100°C Tc
  • No tail current
  • Symmetrical, low voltage overshoot
  • Maximum junction temp. Tvj=175°C
  • Qualif. accor. to JEDEC standards
    • No risk of unwanted turn-on/off
  • No need for gate clamping
  • No need for gate clamping

Documents

Documents

Design resources

Partner solutions

Developer community

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