Active and preferred
RoHS Compliant
Lead-free

IDFW40E65D1E

650 V silicon power diode in TO-247 package
ea.
in stock

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IDFW40E65D1E
IDFW40E65D1E
ea.

Product details

  • Configuration
    Single
  • I(FSM) max
    120 A
  • IF
    40 A
  • IR max
    40 µA
  • Irrm
    11 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 175 °C
  • Package
    TO-247
  • Ptot max
    78 W
  • Qrr
    0.57 µC
  • RthJC max
    1.92 K/W
  • trr
    76 ns
  • VF
    1.7 V
  • Voltage Class max
    650 V
OPN
IDFW40E65D1EXKSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Rapid 1 switching 650 V, 40 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Features

  • 650V emitter controlled technology
  • Temperature stable behavior
  • Low forward voltage (VF)
  • Low reverse recovery charge (Qrr)
  • Low reverse recovery current (Irrm)
  • Softness factor >1
  • Maximum junction temperature 175°C
  • 2500 VRMS electrical isolation
  • 100% tested isolated mounted surface
  • Pb-free plating: RoHS compliant
  • Qualified for industrial application

Benefits

  • no thermal eqiupment needed
  • 35% reduction in assembling time
  • eliminated faults of isolation foil
  • Up to 10°C lower Tc
  • Up to 20% Ioutincrease
  • manufacturing process control
  • Easy paralleling

Diagrams

Circuit_digram_IDFW40E65D1E
Circuit_digram_IDFW40E65D1E
Circuit_digram_IDFW40E65D1E Circuit_digram_IDFW40E65D1E Circuit_digram_IDFW40E65D1E

Documents

Design resources

Developer community

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