Active and preferred
RoHS Compliant

IAUZN04S7N020

40 V, N-Ch, 2 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7
ea.
in stock

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IAUZN04S7N020
IAUZN04S7N020
ea.

Product details

  • ID (@25°C) max
    60 A
  • Launch year
    2024
  • Operating Temperature
    -55 °C to 175 °C
  • Currently planned availability until at least
    2038
  • Polarity
    N
  • QG (typ @10V)
    29 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    2 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    40 V
  • VGS(th)
    2.6 V
OPN
IAUZN04S7N020ATMA2
Product Status active and preferred
Infineon Package
Package Name S3O8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name S3O8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.

Features

  • 3x3 mm² small footprint
  • 60 A high current capability
  • Available in leading-edge OptiMOS™ 7 40V
  • RDS(on) range 1.2 mΩ – 4.9 mΩ
  • Advanced leadless package
  • High avalanche capability
  • SOA ruggedness
  • PPAP Capable Device

Benefits

  • Highest power and current density
  • High thermal capacity lead-frame package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor vs traditional packages
  • JEDEC Industry standard package

Applications

Documents

Design resources

Developer community

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