Active and preferred
RoHS Compliant
Lead-free

FM24CL64B-DGTR

Data Sheet
package
ea.
in stock

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FM24CL64B-DGTR
FM24CL64B-DGTR
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM24CL64B-DGTR
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name DFN-8 (001-85260)
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WSON-8
Package Name DFN-8 (001-85260)
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24CL64B-DGTR is a 64-Kbit (8 K × 8) automotive-grade serial F-RAM memory, providing nonvolatile storage with 10 trillion (1013) read/write cycles and 121-year data retention at 85°C. Featuring a fast I2C interface up to 1 MHz, low active current (max 340 μA at 1 MHz), and operation from 3.0 V to 3.6 V, it is AEC-Q100 Grade 1 compliant and housed in an 8-pin SOIC package.

Features

  • 64-Kbit ferroelectric random access memory
  • 8 K × 8 logical organization
  • 10^13 read/write cycle endurance
  • 121-year data retention at 85°C
  • NoDelay™ instant write technology
  • I2C serial interface up to 1 MHz
  • Low active current: 120 μA at 100 kHz
  • Low standby current: 6 μA at 85°C
  • VDD operation: 3.0 V to 3.6 V
  • Data integrity from –40°C to +125°C
  • Write protection pin (WP)
  • Direct hardware replacement for serial EEPROM

Benefits

  • Reliable nonvolatile storage for frequent
  • Eliminates write delays for instant updates
  • 10^13 cycles enables long product life
  • 121-year retention ensures data safety
  • Low power reduces system energy use
  • I2C up to 1 MHz enables fast communication
  • Wide temp range supports harsh environments
  • Drop-in replacement simplifies upgrades
  • Write protection prevents accidental changes
  • No data polling needed after writes
  • High endurance minimizes maintenance
  • Consistent operation across voltage range

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }