CY62167EV30LL-45ZXA
Active and preferred
RoHS Compliant
Lead-free

CY62167EV30LL-45ZXA

package
ea.
in stock

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CY62167EV30LL-45ZXA
CY62167EV30LL-45ZXA
ea.

Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive
  • Speed
    45 ns
Recommended
OPN
CY62167EV30LL-45ZXA
Product Status active and preferred
Infineon Package
PG-TSOP-48
Package Name TSOP-I-48 (51-85183)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-48
Package Name TSOP-I-48 (51-85183)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62167EV30LL-45ZXA is a 16-Mbit CMOS SRAM organized as 1M × 16 or 2M × 8 with 45 ns access time. It operates from 2.2 V to 3.6 V over the Automotive-A range (–40°C to +85°C) and supports automatic power-down when deselected. Supply current is 30 mA max at fmax and 4.0 mA max at 1 MHz, with standby down to 1.5 µA (12 µA max). It uses CE1/CE2/OE control and is offered in 48-pin TSOP I (Pb-free).

Features

  • 16-Mbit SRAM, 1M×16 or 2M×8
  • 45 ns read/write cycle time
  • VCC operating range 2.2 V to 3.6 V
  • Automatic power-down on deselect
  • Standby current 1.5 µA typ
  • Active current 2.2 mA at 1 MHz typ
  • Data retention at VCC down to 1.5 V
  • ICCDR 10 µA max at VCC=1.5–3.0 V
  • OE/CE/BHE/BLE tri-state control
  • Input/output leakage ±1 µA max

Benefits

  • Fits 16-bit or 8-bit bus designs
  • 45 ns access supports fast reads
  • 2.2–3.6 V suits 3.3 V systems
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data during VCC droop
  • 10 µA retention enables backup
  • Tri-state eases bus sharing/expand
  • Low leakage improves low-power IO

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