Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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CY15V102QN-50PZXI
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15V102QN-50PZXI

END OF LIFE

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Product details

  • Density
    2048 kBit
  • Family
    Excelon™
  • Frequency
    50 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.71 V to 1.89 V
  • Operating Voltage (VCCQ) range
    1.71 V to 1.89 V
  • Organization (X x Y)
    256Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns

OPN
CY15V102QN-50PZXI
Product Status discontinued
Infineon Package
Package Name PDIP-8 (51-85075)
Packing Size 530
Packing Type TUBE
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US

Product Status discontinued
Infineon Package
Package Name PDIP-8 (51-85075)
Packing Size 530
Packing Type TUBE
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
The CY15V102QN-50PZXI is a 2Mb EXCELON™ LP ferroelectric RAM (F-RAM) with 256K × 8 organization, high-speed SPI up to 50 MHz, and 1.71 V to 1.89 V operation. It delivers 10^15 read/write cycles and 151-year data retention at 60°C, supporting –40°C to +85°C industrial range. Advanced write protection, a 256-byte special sector, and unique device ID features make it ideal for reliable, instant nonvolatile memory in industrial controls and data logging applications.

Features

  • 2Mb ferroelectric RAM, 256K × 8 organization
  • Virtually unlimited 10^15 read/write cycles
  • 151-year data retention at 60°C
  • Instant non-volatile write, no delay
  • Up to 50 MHz SPI interface, modes 0 and 3
  • Advanced write protection: hardware
  • Dedicated 256-byte special sector F-RAM
  • Unique device ID and serial number
  • Low active current: 2.4 mA at 40 MHz
  • Standby current: 2.3 µA, deep power down: 0.7
  • Hibernate mode: 0.1 µA typical
  • Input/output leakage current: ±1 µA max

Benefits

  • Reliable for frequent/rapid data logging
  • Eliminates write delays, boosts system speed
  • No data loss from power interruptions
  • Reduces system power consumption
  • Enables long battery life in portable devices
  • Supports high-speed SPI microcontroller
  • Simplifies secure device authentication
  • Protects critical data from accidental writes
  • Special sector survives soldering reflow
  • Easy drop-in replacement for serial
  • Suitable for multi-device SPI buses
  • High endurance lowers maintenance costs

Applications

Documents

Design resources

Developer community