Active and preferred
RoHS Compliant
Lead-free

CY15B201QN-50SXET

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY15B201QN-50SXET
CY15B201QN-50SXET
Data Sheet

Product details

  • Density
    1 MBit
  • Family
    Excelon™
  • Frequency
    50 MHz
  • Interfaces
    SPI
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    1.8 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
Recommended
OPN
CY15B201QN-50SXET
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B201QN-50SXET is a 1-Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) with virtually unlimited endurance of 10 trillion read/write cycles and 121-year data retention. Operating from 1.8 V to 3.6 V across -40°C to +125°C, it meets AEC-Q100 Grade 1 automotive requirements. The device supports SPI up to 50 MHz, advanced write protection, and unique ID and serial number registers. Low-power modes and robust data integrity suit automotive and industrial applications.

Features

  • 1-Mb ferroelectric RAM, 128 K × 8
  • Virtually unlimited endurance, 10^13 cycles
  • 121-year data retention at 85°C
  • Instant non-volatile write, no delays
  • Fast SPI interface up to 50 MHz
  • Supports SPI modes 0 and 3
  • Advanced write protection: hardware &
  • Device and unique ID, serial number support
  • Dedicated 256-byte special sector
  • Low active (4.3 mA), standby (3.2 µA) current
  • Deep Power Down and Hibernate modes
  • Wide VDD: 1.8 V to 3.6 V

Benefits

  • Reliable data even after power loss
  • No wear-out, ideal for frequent writes
  • Fast writes, no waiting or polling needed
  • High-speed operation for demanding apps
  • Flexible integration with standard SPI
  • Enhanced data security and protection
  • Unique ID simplifies traceability
  • Special sector survives reflow soldering
  • Low power extends battery/system life
  • Power modes minimize standby drain
  • Operates in harsh environments
  • Drop-in replacement for serial EEPROM/flash

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }