Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY15B104QSN-108LPXI

END OF LIFE

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Product details

  • Density
    4096 kBit
  • Family
    Excelon™
  • Frequency
    108 MHz
  • Interfaces
    QSPI
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    1.8 V to 3.6 V
  • Operating Voltage range
    1.8 V to 3.6 V
  • Organization (X x Y)
    512Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
CY15B104QSN-108LPXI
Product Status discontinued
Infineon Package
Package Name GQFN-8 (002-18131)
Packing Size 490
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name GQFN-8 (002-18131)
Packing Size 490
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B104QSN-108LPXI is a 4-Mbit EXCELON™ Ultra Ferroelectric RAM (F-RAM) with quad SPI, organized as 512K × 8 and supporting up to 108 MHz SDR and 54 MHz DDR. It delivers instant non-volatile writes, high endurance, and 151-year data retention at 65°C. Operating from 1.8 V to 3.6 V over -40°C to +85°C, it features low power, ECC/CRC, write protection, and a 256-byte special sector. The 8-pin GQFN package is RoHS compliant and not recommended for new designs.

Features

  • 4-Mbit F-RAM, 512K × 8 organization
  • Virtually unlimited 10^14 read/write cycles
  • 151-year data retention
  • Quad, dual, and extended SPI protocols
  • Up to 108 MHz SPI SDR, 54 MHz SPI DDR
  • Execute-in-place (XIP) support
  • Hardware and software write protection
  • Built-in ECC and CRC for data integrity
  • Unique device and serial number
  • Dedicated 256-byte special sector
  • Low active (10 mA) and standby (110 µA)
  • Deep power-down and hibernate modes

Benefits

  • Reliable data even after 151 years
  • No write delays, instant non-volatile storage
  • Frequent writes without wear-out risk
  • Fast data access with 108 MHz SPI
  • Flexible interface for easy integration
  • Enhanced data integrity with ECC/CRC
  • Secure operation with write protection
  • Device traceability via unique ID
  • Special sector survives reflow cycles
  • Low power for energy-sensitive designs
  • Hibernate mode extends battery life
  • XIP enables direct code execution

Documents

Design resources

Developer community

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