CY15B016Q-SXE
Active and preferred
RoHS Compliant

CY15B016Q-SXE

Data Sheet
package
ea.
in stock

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CY15B016Q-SXE
CY15B016Q-SXE
ea.
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    16 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.65 V
  • Operating Voltage range
    3 V to 3.6 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
Recommended
OPN
CY15B016Q-SXE
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 485
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CY15B016Q-SXE is a 16-Kbit automotive ferroelectric RAM (F-RAM) with 10 trillion read/write cycles and 121-year data retention at 85°C. It operates from 3.0 V to 3.6 V and supports SPI speeds up to 16 MHz in modes 0 and 3. NoDelay™ writes, hardware and software write protection, and low power consumption ensure reliability. The 8-pin SOIC package is AEC-Q100 Grade 1 and RoHS compliant, ideal for frequent-write automotive and industrial applications.

Features

  • 16-Kbit F-RAM organized as 2K × 8
  • 10 trillion (10¹³) read/write endurance
  • 121-year data retention at 85°C
  • NoDelay™ writes, immediate data storage
  • Up to 16 MHz SPI interface
  • Supports SPI mode 0 and mode 3
  • Hardware and software write protection
  • 300 μA active current at 1 MHz
  • 20 μA standby current (typical)
  • Low-voltage operation: 3.0 V to 3.6 V
  • –40°C to +125°C operating range
  • Output data valid time: max 25 ns

Benefits

  • Reliable nonvolatile storage for critical
  • Eliminates write delays for instant updates
  • Withstands frequent, rapid write cycles
  • Long data retention reduces maintenance
  • Fast SPI enables quick data access
  • Drop-in replacement for serial flash/EEPROM
  • Multiple protections guard against data loss
  • Low active/standby current saves power
  • Operates in harsh temperature conditions
  • Simple integration with standard SPI
  • Consistent performance over device life
  • High-speed timing supports fast systems

Applications

Documents

Design resources

Partner solutions

Developer community

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