CY14B116L-Z45XI

Data Sheet

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CY14B116L-Z45XI
CY14B116L-Z45XI
Data Sheet

Product details

  • Density
    16384 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Mb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14B116L-ZS45XI is a 16-Mbit (2048K × 8) parallel nvSRAM that combines fast SRAM with QuantumTrap nonvolatile storage per cell. It operates from 2.7 V to 3.6 V over -40°C to 85°C with 45 ns access. Data is automatically STORED on power-down using a 19.8 µF to 82.0 µF VCAP capacitor, and can be STORED or RECALLED by software or the HSB pin. Rated for 1M STORE cycles and 20-year retention.

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Benefits

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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