BSZ0910ND

Infineon’s optimized solution for wireless power and drives
Data Sheet

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BSZ0910ND
BSZ0910ND
Data Sheet

Product details

  • Budgetary Price €/1k
    0.43
  • ID (@25°C) max
    25 A
  • IDpuls max
    40 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Symmetrical Dual 3x3
  • Polarity
    N
  • Ptot max
    31 W
  • Qgd
    1 nC
  • QG (typ @10V)
    8.2 nC
  • RDS (on) (@4.5V) max
    13 mΩ
  • RthJA max
    65 K/W
  • RthJC max
    4 K/W
  • Rth
    4 K/W
  • VDS max
    30 V
  • VGS(th)
    1.6 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The leading OptiMOS™ technology combined with the PQFN 3.0 x 3.0mm package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0910ND OptiMOS™ 30V halfbridge fits perfectly in wireless charging and drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.

Features

  • Symmetric half-bridge with very low RDS(on) in a small 3.0 x 3.0mm package outline
  • Exposed pads
  • Logic level (4.5V rated)
  • RoHS compliant 6/6 (full lead free)

Benefits

  • Low switching losses
  • High switching frequency operation
  • Lowest parasitics
  • Low operating temperature
  • Low gate drive losses
  • RoHS 6/6 lead free product

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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