Active
RoHS Compliant
Lead-free

BSO613SPV G

P-channel enhancement mode Field-Effect Transistor (FET), -60V, SO-8
ea.
in stock

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BSO613SPV G
BSO613SPV G
ea.

Product details

  • Budgetary Price €/1k
    0.34
  • Ciss
    700 pF
  • Coss
    235 pF
  • ID (@25°C) max
    -3.44 A
  • ID max
    -3.44 A
  • IDpuls max
    -13.8 A
  • Mode
    Enhancement
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SO-8
  • Polarity
    P
  • Ptot max
    2.5 W
  • QG (typ @10V)
    20 nC
  • RDS (on) (@10V) max
    130 mΩ
  • Rth
    100 K/W
  • VDS max
    -60 V
  • VGS(th)
    -2.1 V to -4 V
OPN
BSO613SPVGXUMA1
Product Status active
Infineon Package
Package Name SO-8
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SO-8
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

  • Enhancement mode
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
RoHS compliant, Halogen-free
  • Qualified according to AEC Q101
  • Documents

    Design resources

    Developer community

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