Active and preferred
RoHS Compliant

BSC152N15LS5

The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability
Data Sheet
ea.
in stock

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BSC152N15LS5
BSC152N15LS5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.61
  • ID (@25°C) max
    55 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @4.5V)
    12.2 nC
  • QG (typ @10V)
    23 nC
  • RDS (on) (@4.5V) max
    20 mΩ
  • RDS (on) (@10V) max
    15.2 mΩ
  • VDS max
    150 V
  • VGS(th)
    1.8 V
Recommended
OPN
BSC152N15LS5ATMA1
Product Status active and preferred
Infineon Package PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™ 5 Logic-Level power MOSFET 150 V family offers the same excellent performance of the OptiMOS™ 5 150 V products with the capability to operate with VGS = 4.5 V. The BSC152N15LS5 features very low RDS(on) of 15.2/20 mOhm (VGS = 10 V/4.5 V) and very low Qg of 12.2 nC (VGS = 4.5 V) in a industry standard SuperSO8 package, enabling optimal thermal management for small in lightweight USB-PD EPR charger and adapter applications.

Features

  • Competitive RDS(on) level
  • Very low switching losses
  • Fully optimized for VGS = 4.5 V
  • Tailored to SR that provide 5 V

Benefits

  • Highly efficient designs
  • Lower temperature when VGS < 10V
  • Improved thermal management
  • Less system complexity

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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