Active and preferred
RoHS Compliant

BSC117N08NS5

OptiMOS™ 5 power MOSFET 80V for telecom applications
Data Sheet
package
ea.
in stock

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BSC117N08NS5
BSC117N08NS5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.37
  • Ciss
    1000 pF
  • Coss
    180 pF
  • ID (@25°C) max
    49 A
  • IDpuls max
    196 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SuperSO8 5x6
  • Pin Count
    8 Pins
  • Polarity
    N
  • Ptot max
    50 W
  • QG (typ @10V)
    15 nC
  • RDS (on) (@10V) max
    11.7 mΩ
  • RthJA max
    50 K/W
  • RthJC max
    2.5 K/W
  • Rth
    2.5 K/W
  • VDS max
    80 V
  • VGS(th)
    3 V
Recommended
OPN
BSC117N08NS5ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name SuperSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name SuperSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ 5 80 V power MOSFET , especially designed for Synchronous Rectification for telecom and server power supplies . In addition, the device can also be utilized in other industrial applications such as solar , low voltage drives and adapter . Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Up to 44% reduced output capacitance
  • 43% RDS(on) reduction from previous gen

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot
0

Documents

Documents

Design resources

Partner solutions

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