BSB012NE2LXI

Data Sheet

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BSB012NE2LXI
BSB012NE2LXI
Data Sheet

Product details

  • Budgetary Price €/1k
    0.75
  • Ciss
    4400 pF
  • Coss
    1900 pF
  • ID (@25°C) max
    170 A
  • IDpuls max
    400 A
  • Micro-stencil
    IRF66MX-25
  • Mounting
    SMD
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    DirectFET(M)
  • Polarity
    N
  • Ptot max
    57 W
  • QG (typ @10V)
    62 nC
  • QG (typ @4.5V)
    30 nC
  • RDS (on) (@10V) max
    1.2 mΩ
  • RDS (on) (@4.5V) max
    1.6 mΩ
  • RDS (on) (@4.5V LL) max
    1.6 mΩ
  • RthJC max
    1 K/W
  • Rth
    1 K/W
  • Special Features
    Monolithically Integrated Schottky-like Diode
  • VDS max
    25 V
  • VGS(th)
    1.2 V to 2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Benefits

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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