Active and preferred
RoHS Compliant
Lead-free

BGA9H1BN6

BGA9H1BN6 low noise amplifier for 4G and 5G applications
Data Sheet
package
ea.
in stock

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BGA9H1BN6
BGA9H1BN6
ea.
Data Sheet

Product details

  • Frequency
    2300 - 2700
  • Gain
    20.3 dB
  • I
    2.2 mA to 5.5 mA
  • IIP3
    -7 dBm
  • NF
    0.6 dB
  • P-1dB (in)
    -16
  • VCC operating
    1.1 V to 3.3 V
Recommended
OPN
BGA9H1BN6E6327XTSA1
Product Status active and preferred
Infineon Package
PG-TSNP-6
Package Name N/A
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSNP-6
Package Name -
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.5 and 2.7 GHz (for band n41). Thanks to a high gain and an ultra-low noise figure performance of the LNA the system sensitivity is significantly improved compared to conventional LNAs. The GPIO interface provides a straightforward control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high performance mode can be selected to increase system dynamic. Thanks to the low-power mode with 2.2 mA current consumption and 1.2V operation voltage the overall power consumption is extremely low. The BGA9H1BN6 is suitable to be implemented in small battery powered devices like wearables or smartphones. 

Features

  • Power gain: 20.0 dB
  • Low noise figure: 0.5 dB
  • Low current consumption: min. 2.2 mA
  • Frequency range from 2.5 to 2.7 GHz
  • Supply voltage: 1.1 to 3.3 V
  • GPIO control interface
  • Multi-state control
  • Small form factor 1.1 mm x 0.7 mm
  • High EMI robustness
  • RoHS and WEEE compliant package

Applications

Documents

Documents

Design resources

Partner solutions

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