Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BGA8V1BN6

END OF LIFE

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BGA8V1BN6
BGA8V1BN6

Product details

  • Frequency
    3300 - 3800 MHz
  • Gain
    15 dB
  • I
    4.2 mA
  • IIP3
    -3 dBm
  • NF
    1.2 dB
  • P-1dB (in)
    -15 dBm
  • VCC operating
    1.6 V to 3.1 V
OPN
BGA8V1BN6E6327XTSA1
Product Status discontinued
Infineon Package
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

Features

  • Insertion power gain: 15.0 dB
  • Insertion Loss in bypass mode: 5.3 dB
  • Low noise figure: 1.2dB
  • Low current consumption: 4.2mA
  • Operating frequencies: 3.3 - 3.8 GHz
  • Multi-state control: OFF-, bypass- and high gain-Mode
  • Supply voltage: 1.6 V to 3.1 V
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B9HF Silicon Germanium technology
  • RF input and RF output internally matched to 50 Ohm
  • No external SMD components necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

Applications

Documents

Design resources

Developer community

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