Active and preferred
RoHS Compliant
Lead-free

BGA7L1BN6

ea.
in stock

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BGA7L1BN6
BGA7L1BN6
ea.

Product details

  • Frequency
    716 - 960 MHz
  • Gain
    13.6 dB
  • I
    4.9 mA
  • IIP3
    5 dBm
  • NF
    0.7 dB
  • P-1dB (in)
    -1 dBm
  • VCC operating
    1.5 V to 3.6 V
OPN
BGA7L1BN6E6327XTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc.

Features

  • Insertion power gain: 13.6 dB
  • Low noise figure: 0.75 dB
  • Low current consumption: 4.9 mA
  • Insertion loss in bypass mode: -2.2 dB
  • Operating frequencies: 716 - 960 MHz
  • Two-state control: Bypass- and high gain-mode
  • Supply voltage: 1.5 V to 3.6 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • Pb-free (RoHS compliant) package
 

Applications

Documents

Design resources

Developer community

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