Active
RoHS Compliant
Lead-free

BGA5M1BN6

Data Sheet
package

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BGA5M1BN6
BGA5M1BN6
Data Sheet

Product details

  • Frequency
    1805 - 2200 MHz
  • Gain
    19.4 dB
  • I
    2.8 mA
  • IIP3
    -7 dBm
  • NF
    0.65 dB
  • P-1dB (in)
    -16 dBm
  • VCC operating
    1.5 V to 3.6 V
Recommended
OPN
BGA5M1BN6E6328XTSA1
Product Status active
Infineon Package
TSNP-6-2
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
TSNP-6-2
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BGA5M1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 19.3 dB gain and 0.65 dB noise figure at a current consumption of 9.5mA. In bypass mode the LNA provides an insertion loss of 4.7 dB.The BGA5M1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC.

Features

  • Insertion power gain: 19.3 dB
  • Insertion loss in bypass mode: 4.7 dB
  • Low noise figure: 0.65 dB
  • Low current consumption: 9.5mA
  • Operating frequencies: 1805 - 2200 MHz
  • Multi-state control: bypass- and high gain-mode
  • Supply voltage: 1.5 V to 3.6 V
  • Ultra small TSNP-6-2 and TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
  • B9HF Silicon Germanium technology
  • RF output internally matched to 50 Ohm
  • Low external component count
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

Documents

Documents

Design resources

Partner solutions

Developer community

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