not for new design
RoHS Compliant
Lead-free

BGA5L1BN6

Data Sheet
package

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BGA5L1BN6
BGA5L1BN6
Data Sheet

Product details

  • Frequency
    600 - 1000 MHz
  • Gain
    18.5 dB
  • I
    8.2 mA
  • IIP3
    -7 dBm
  • NF
    0.7 dB
  • P-1dB (in)
    -20 dBm
  • VCC operating
    1.5 V to 3.6 V
OPN
BGA5L1BN6E6328XTSA1
Product Status not for new design
Infineon Package
TSNP-6-2
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
TSNP-6-2
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB.The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

Features

  • Operating frequencies: 600 - 1000 MHz
  • Insertion power gain: 18.5 dB
  • Insertion loss in bypass mode: 2.7 dB
  • Low noise figure: 0.7dB
  • Low current consumption: 8.2mA
  • Multi-state control: bypass- and high gain-mode
  • Ultra small TSNP-6-2 and TSNP-6-10 leadless package
  • RF output internally matched to 50 Ohm
  • Low external component count

Documents

Documents

Design resources

Partner solutions

Developer community

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