Active and preferred
RoHS Compliant
Lead-free

BGA10H1MN9

Data Sheet
package
ea.
in stock

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BGA10H1MN9
BGA10H1MN9
ea.
Data Sheet

Product details

  • Frequency
    2300 - 2700 MHz
  • Gain
    19.7 dB
  • ICC
    6 mA
  • IIP3
    -6 dBm
  • IP1dB
    -19 dBm
  • NF
    0.8 dB
  • P-1dB
    -19 dBm
  • Size
    1.1 x 1.1 mm²
  • VCC operating
    1.1 - 2.0 V
Recommended
OPN
BGA10H1MN9E6327XTSA1
Product Status active and preferred
Infineon Package
PG-TSNP-9
Package Name N/A
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSNP-9
Package Name -
Packing Size 12000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BGA10H1MN9 is designed for 4G and 5G applications covering 3GPP Bands between 2.3 and 2.7 GHz (e.g. B7 and B41). As a result of high gain and an ultra-low Noise Figure performance of the LNA frontend losses can be compensated and the data rate can be significantly improved. The MIPI interface provides a comprehensive control over multiple gain modes and bias modes to increase the overall system dynamic range.

Features

  • Frequency range from 2.3 to 2.7 GHz
  • Power gain: 19.7 dB
  • Low noise figure: 0.8 dB
  • Low current consumption: 6.0 mA
  • Gain mode support for MediaTek, LSI and Qualcomm platforms
  • MIPI RFFE 3.0
  • RF output internally matched to 50 Ω
  • Support of 1.2 V and 1.8 V VDD/VIO
  • Software programmable MIPI RFFE USID
  • 4 USIDs supported
  • Small form factor 1.1 mm x 1.1 mm
  • RoHS and WEEE compliant package

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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