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Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers
US International Trade Commission’s (US ITC) determination confirmed, banning Innoscience’s patent-infringing GaN products from U.S. market
Infineon wins another patent infringement case against Innoscience
An impulse for Germany, Europe and the world: Infineon opens the world's largest fab for power semiconductors and analog/mixed-signal technologies in Dresden
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×
Please note that this is an end of life product. See newer alternative product version
Please note that this is an end of life product. See newer alternative product version
BFR360F
Product details
-
fT14 GHz
-
Gmax15.50 dB @1900 MHz
-
IC max35 mA
-
NFmin1 dB @1900 MHz
-
OIP324 dBm
-
OP1dB9 dBm
-
PackageTSFP-3
-
Ptot210 mW
-
VCEO max6 V
|
OPN
|
BFR360FH6327XTSA1 |
|---|---|
| Product Status | discontinued |
| Infineon Package | |
| Package Name | N/A |
| Packing Size | 3000 |
| Packing Type | TAPE & REEL |
| Moisture Level | 1 |
| Moisture Packing | NON DRY |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
|
|
|
| Product Status | discontinued |
|---|---|
| Infineon Package | |
| Package Name | - |
| Packing Size | 3000 |
| Packing Type | TAPE & REEL |
| Moisture Level | 1 |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
NPN Silicon RF Transistor
Features
- Low noise amplifier for low current applications
- Collector design supports 5V supply voltage
- For oscillators up to 3.5 GHz
- Low noise figure 1.0 dB at 1.8 GHz
- Pb-free (RoHS compliant) package
Applications
Documents
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