AUIRFB8409

40 V, N-Ch, 1.2 mΩ max, Automotive MOSFET, TO220, Gen 12.7
Data Sheet

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AUIRFB8409
AUIRFB8409
Data Sheet

Product details

  • Budgetary Price €/1k
    4.69
  • Country of Assembly ((Last BE site, current, subject to change))
    China, Mexico
  • Country of Diffusion ((Last FE site, current, subject to change))
    Germany, Israel
  • ID (@25°C) max
    195 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO220
  • Polarity
    N
  • Ptot max
    375 W
  • Qgd
    98 nC
  • QG (typ @10V)
    300 nC
  • QG (typ @10V) max
    450 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    1.2 mΩ
  • RthJC max
    0.4 K/W
  • Technology
    Gen 12.7
  • Tj max
    175 °C
  • VDS max
    40 V
  • VGS(th) min
    2.2 V
  • VGS(th) max
    3.9 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Features

  • Advanced Process Technology
  • New Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified
  • PPAP Capable Device

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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