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×
NEW
Active and preferred
RoHS Compliant
Lead-free
AIMC120R008D22M2P1
NEW
Unleashing the Power of Infineon's Cutting-Edge SiC Trench Technology
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AIMC120R008D22M2P1
Product details
-
Die Size32 mm²
-
Product CategorySilicon Carbide MOSFET Baredie
-
QualificationAutomotive
-
RDS (on) (@ Tj = 25°C)8.4 mΩ
-
RDS (on) (@ Tj = 25°C) max11 mΩ
-
TechnologyCoolSiC™ G2pE
-
Voltage Class max1200 V
-
Voltage Class1200 V
| Recommended | |
|
OPN
|
AIMC120R008D22M2P1X7SA1 |
| Product Status | active and preferred |
| Infineon Package | -- |
| Package Name | N/A |
| Packing Size | 1 |
| Packing Type | HORIZONTAL FRAME SHIPPER |
| Moisture Level | N/A |
| Moisture Packing | DRY |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
|
|
|
| Product Status |
Active
|
|---|---|
| Infineon Package | -- |
| Package Name | - |
| Packing Size | 1 |
| Packing Type | HORIZONTAL FRAME SHIPPER |
| Moisture Level | - |
| Moisture Packing | DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
Our latest automotive Gen2pE devices in the 1200 V voltage class deliver unprecedented performance for main inverter applications in high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our SiC solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
Features
- High efficiency and power density
- State-of-the-art trench design
- Various metal stack options
- Superior gate-oxide reliability
Benefits
- Ideal for automotive requirements
- Available in 1200 V class
- Customized development (on demand)
- Cost benefit due to module shrink
- High reliability and quality
Applications
Documents
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